Semiconductor package

ABSTRACT

A semiconductor package includes a first substrate, a first layer structure, a second layer structure and a first antenna layer. The first antenna layer is formed on at least one of the first layer structure and the second layer structure. The first layer structure is formed between the first substrate and the second layer structure.

This application is a Continuation-In-Part of U.S. application Ser. No.15/672,440, filed Aug. 9, 2017 which is a Continuation of U.S.application Ser. No. 15/162,760 (now patented as U.S. Pat. No.9,761,534), filed May 24, 2016, which claims the benefit of U.S.provisional application Ser. No. 62/221,262, filed Sep. 21, 2015. Thisapplication also claims the benefit of U.S. provisional application Ser.No. 62/587,624, filed Nov. 17, 2017, the disclosure of which isincorporated by reference herein in its entirety.

FIELD OF THE INVENTION

The invention relates to a semiconductor package, and more particularlyto a semiconductor package having antenna.

BACKGROUND OF THE INVENTION

In the electronics industry, high integration and multiple functionswith high performance become essential for new products. And meanwhile,high integration may cause higher manufacturing cost, since themanufacturing cost is in proportional to its size. Therefore, demandingon miniaturization of integrated circuit (IC) packages has become moreand more critical.

Package-on-package (PoP) is now the fastest growing semiconductorpackage technology since it is a cost-effective solution to high-densitysystem integration in a single package. In a PoP structure, variouspackages are integrated in a single semiconductor package to reduce thesize. Accordingly, there exists a need to provide a semiconductorpackage to overcomes, or at least reduces the above-mentioned problems.

Therefore, it is important to increase the performance of the 3D graphicprocessing circuit while reducing the consumption of the electric powerand extending the operating time of the mobile device.

SUMMARY OF THE INVENTION

In one embodiment of the invention, a semiconductor package is provided.The semiconductor package includes a first substrate, a first layerstructure, a second layer structure and a first antenna layer. The firstantenna layer is formed on at least one of the first layer structure andthe second layer structure. The first layer structure is formed betweenthe first substrate and the second layer structure.

In another embodiment of the invention, a semiconductor package isprovided. The semiconductor package includes a first substrate, a firstlayer structure, a second layer structure and a first antenna layer. Thefirst layer structure includes a conductive pillar layer exposed fromthe first layer structure. The first antenna layer is formed on at leastone of the first layer structure and the second layer structure. Thefirst layer structure is formed between the first layer structure andthe second layer structure.

Numerous objects, features and advantages of the invention will bereadily apparent upon a reading of the following detailed description ofembodiments of the invention when taken in conjunction with theaccompanying drawings. However, the drawings employed herein are for thepurpose of descriptions and should not be regarded as limiting.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objects and advantages of the invention will become morereadily apparent to those ordinarily skilled in the art after reviewingthe following detailed description and accompanying drawings, in which:

FIG. 1 illustrates a diagram of a semiconductor package according to anembodiment of the invention;

FIG. 2 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 3 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 4 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 5 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 6 illustrates a diagram of a semiconductor device according to oneembodiment of the invention;

FIG. 7 illustrates a diagram of a semiconductor device according toanother embodiment of the invention;

FIGS. 8A to 8H illustrate manufacturing processes of the semiconductorpackage of FIG. 1;

FIGS. 9A to 9B illustrate manufacturing processes of the semiconductorpackage of FIG. 2;

FIGS. 10A to 10C illustrate manufacturing processes of the semiconductorpackage of FIG. 3;

FIGS. 11A to 11H illustrate manufacturing processes of the semiconductorpackage of FIG. 4;

FIGS. 12A to 12C illustrate manufacturing processes of the semiconductorpackage of FIG. 5;

FIG. 13 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 14 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 15 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 16 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 17 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 18 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 19 illustrates a diagram of a semiconductor package according toanother embodiment of the invention;

FIG. 20 illustrates a diagram of a semiconductor package according toanother embodiment of the invention; and

FIG. 21 illustrates a diagram of a semiconductor package according toanother embodiment of the invention.

FIG. 22 illustrates a diagram of a semiconductor package according toanother embodiment of the invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1 illustrates a diagram of a semiconductor package 100 according toan embodiment of the invention. The semiconductor package 100 includes apackage substrate 110, a first electronic component 120, a secondpackage body 130, a second electronic component 140 and at least oneconductive contact 150.

The package substrate 110 includes a first conductive layer 111, a firstpillar layer 112, a first package body 113 and a second conductive layer114.

The first conductive layer 111 includes a plurality of elements 1111,such as pads, traces or combination thereof. Each element 1111 has afirst lower surface 1111 b and a first lateral surface 1111 s, and thefirst package body 113 has a second lower surface 113 b. The first lowersurface 1111 b is exposed from the second lower surface 113 b, and thefirst lower surface 1111 b is aligned with the second lower surface 113b. Each element 1111 may be a multi-layered structure or single-layeredstructure. For example, each element 1111 includes nickel layer, goldlayer, palladium layer, copper layer or combination thereof.

The first pillar layer 112 connects the first conductive layer 111 tothe second conductive layer 114. In the present embodiment, the firstpillar layer 112 includes a plurality of pillars 1121. The pillars 1121are made of a material such as copper. Each pillar 1121 has a firstupper surface 1121 u, and the first package body 113 has a second uppersurface 113 u, wherein the first upper surface 1121 u is exposed fromthe second upper surface 113 u and aligned with the second upper surface113 u.

The first package body 113 encapsulates the first conductive layer 111and the first pillar layer 112. For example, the first package body 113encapsulates the first lateral surface 1111 s of the first conductivelayer 111 and the lateral surface of each pillar 1121.

The first package body 113 may be a molding compound which is made of amaterial including, for example, a Novolac-based resin, an epoxy-basedresin, a silicone-based resin, or another suitable encapsulant. Suitablefillers also can be included, such as powdered SiO₂.

Since the first package body 113 is the molding compound, the packagesubstrate 110 has thin thickness t1. Compared to the silicon substrate,the thickness t1 of the package substrate 110 is much smaller. Ingeneral, the silicon substrate has a thickness larger than 100micrometers. In the present embodiment, the thickness t1 of the packagesubstrate 110 is smaller, and accordingly the thickness t2 of thesemiconductor package 100 may be reduced.

The second conductive layer 114 includes a plurality of elements 1141,such as pads, traces or combination thereof. Each element 1141 may be amulti-layered structure or single-layered structure. For example, theelement 1141 may be nickel layer, gold layer, copper layer, palladiumlayer or combination thereof.

In the present embodiment, the first electronic component 120 is coupledto the second conductive layer 114 of the package substrate 110 in a“face-down” orientation and electrically connected to the secondconductive layer 114 via a plurality of conductive contacts 121. Thisconfiguration is sometimes referred to as “flip-chip”. The conductivecontact 121 may be solder ball, conductive pillar, etc.

In other embodiments, the first electronic component 120 may be coupledto the package substrate 110 in a “face-up” orientation, andelectrically connected to the package substrate 110 via a plurality ofconductive bond wires (not shown). The first electronic component 120may be an active chip or a passive component, such as a resistor, aninductor or a capacitor. In another embodiment, the number of the firstelectronic component 120 may be several. In addition, the firstelectronic component 120 may be, for example, a chip, a passivecomponent, etc.

The second package body 130 formed on the second upper surface 113 u ofthe package substrate 110 encapsulates the second conductive layer 114and the first electronic component 120. The second package body 130 maybe made of a material which is the same as that of the first packagebody 113.

The second electronic component 140 is disposed on the first lowersurface 1111 b of the first substrate 110 and electrically connects tothe first conductive layer 111. In one embodiment, the second electroniccomponent 140 is, for example, passive component, such as a resistor, aninductor or a capacitor.

The conductive contacts 150 are disposed on the first lower surface 1111b of the first substrate 110. The semiconductor package 100 is disposedon and electrically connected to an exterior circuit, such as a circuitboard, through the conductive contacts 150. The conductive contacts 150may be solder ball, conductive pillar, etc.

FIG. 2 illustrates a diagram of a semiconductor package 200 according toanother embodiment of the invention. The semiconductor package 200includes the package substrate 110, the first electronic component 120,the second package body 130, the second electronic component 140, atleast one conductive contact 150, a second pillar layer 260 and aninterposer 270.

The second package body 130 further encapsulates the second pillar layer260. The second pillar layer 260 includes a plurality of pillars 261connecting the second conductive layer 114 to the interposer 270.

The interposer 270 is disposed on the second package body 130 andelectrically connects to the package substrate 110 through the secondpillar layer 260 encapsulated within second package body 130. Theinterposer 270 may be electrically connected to the first electroniccomponent 120 through the second pillar layer 260 and the packagesubstrate 110.

Each pillar 261 has a third upper surface 261 u, and the second packagebody 130 has a fourth upper surface 130 u, wherein the third uppersurface 261 u is exposed from the fourth upper surface 130 u and alignedwith the fourth upper surface 130 u.

FIG. 3 illustrates a diagram of a semiconductor package 300 according toanother embodiment of the invention. The semiconductor package 300includes the package substrate 110, the first electronic component 120,the second package body 130, the second electronic component 140, atleast one conductive contact 150, the second pillar layer 260 and afourth conductive layer 370.

The second package body 130 encapsulates the second conductive layer114, the second pillar layer 260 and the fourth conductive layer 370.

The second pillar layer 260 electrically connects the second conductivelayer 114 to the fourth conductive layer 370, such that the firstelectronic component 120 may electrically connect the fourth conductivelayer 370 through the package substrate 110 and the second pillar layer260.

The fourth conductive layer 370 includes a plurality of elements 371,such as pads, traces or combination thereof. Each element 371 has afifth upper surface 371 u, and the second package body 130 has thefourth upper surface 130 u, wherein the fifth upper surface 371 u isexposed from the fourth upper surface 130 u and aligned with the fourthupper surface 130 u.

Each element 371 may be a multi-layered structure or single-layeredstructure. For example, the each element 371 includes nickel layer, goldlayer, palladium layer, copper layer or combination thereof.

The fourth conductive layer 370 is embedded in the second package body130. For example, each element 371 (trace or pad) has a second lateralsurface 371 s which is encapsulated by the second package body 130.Since the fourth conductive layer 370 is embedded in the second packagebody 130, the second package body 130 has a thin thickness t3.

FIG. 4 illustrates a diagram of a semiconductor package 400 according toanother embodiment of the invention. The semiconductor package 400includes a package substrate 410, the first electronic component 120,the second package body 130, the second electronic component 140, atleast one conductive contact 150, the second pillar layer 260 and theinterposer 270.

In the present embodiment, the package substrate 410 is multi-layeredpackage structure. For example, the package substrate 410 includes thefirst conductive layer 111, the first pillar layer 112, the firstpackage body 113, the second conductive layer 114, a third conductivelayer 411, a third pillar layer 412 and a third package body 413. Thefirst conductive layer 111, the first pillar layer 112 and the firstpackage body 113 together form a first single-layered package structure,and the third conductive layer 411, the third pillar layer 412 and thethird package body 413 form a second single-layered package structure.In another embodiment, the number of the layers of the package substrate410 may be more than two.

The third conductive layer 411 is formed on the second upper surface 113u of the first package body 113 and electrical connects to the firstpillar layer 112. The third pillar layer 412 connects the thirdconductive layer 411 to the second conductive layer 114. The thirdpackage body 413 encapsulates the third pillar layer 412 and the thirdconductive layer 411. In the present embodiment, the second conductivelayer 114 is formed on a sixth upper surface 413 u of the third packagebody 413 and electrically connects to the first conductive layer 111through the third conductive layer 411, the third pillar layer 412 andthe first pillar layer 112.

In addition, the third package body 413 may be made of a material whichis the same as that of the first package body 113.

Since the first package body 113 and the third package body 413 are themolding compounds, the package substrate 410 has thin thickness t1.Compared to the silicon substrate, the thickness t1 of the packagesubstrate 410 is much smaller. In general, the silicon substrate has thethickness larger than 100 micrometers. In the present embodiment, thethickness t1 of the package substrate 410 is smaller, and accordinglythe thickness t2 of the semiconductor package 100 may be reduced.

FIG. 5 illustrates a diagram of a semiconductor package 500 according toanother embodiment of the invention. The semiconductor package 500includes the package substrate 410, the first electronic component 120,the second package body 130, the second electronic component 140, atleast one conductive contact 150, the second pillar layer 260 and thefourth conductive layer 370.

In the present embodiment, since the fourth conductive layer 370 isembedded in the second package body 130, the second package body 130 hasthe thin thickness t3. The second pillar layer 260 electrically connectsthe second conductive layer 114 to the fourth conductive layer 370, suchthat the first electronic component 120 may electrically connect thefourth conductive layer 370 through the package substrate 410 and thesecond pillar layer 260.

FIG. 6 illustrates a diagram of a semiconductor device 10 according toone embodiment of the invention. The semiconductor device 10 includesthe semiconductor package 200 and a third electronic component 11. Inanother embodiment, the third electronic component 11 may be asemiconductor package including a plurality of dies, such as DRAMsstacked to each other.

The third electronic component 11 is disposed on the interposer 270 ofthe semiconductor package 200 in a “face-down” orientation andelectrically connected to the interposer 270 via a plurality ofconductive contacts 115. The conductive contacts 115 may be solder ball,conductive pillar, etc. In another embodiment, the third electroniccomponent 11 is disposed on the interposer 270 in a “face-up”orientation and electrically connected to the interposer 270 via aplurality of conductive bond wires (not shown). The third electroniccomponent 11 electrically connects to the first electronic component 120through the interposer 270, the second pillar layer 260 and the packagesubstrate 110. In addition, the third electronic component 11electrically connects to the conductive contacts 150 through theinterposer 270, the second pillar layer 260 and the package substrate110.

FIG. 7 illustrates a diagram of a semiconductor device 20 according toanother embodiment of the invention. The semiconductor device 20includes the semiconductor package 300 and a third electronic component11.

The third electronic component 11 is disposed on the fourth conductivelayer 370 of the semiconductor package 300 in a “face-down” orientationor in a “face-up” orientation. The third electronic component 11electrically connects to the first electronic component 120 through thefourth conductive layer 370, the second pillar layer 260 and the packagesubstrate 110. In addition, the third electronic component 11electrically connects to the conductive contacts 150 through the fourthconductive layer 370, the second pillar layer 260 and the packagesubstrate 110.

In another embodiment, the third electronic component 11 may be disposedon the interposer 270 of the semiconductor package 400 of FIG. 4 to formanother semiconductor device. In other embodiment, the third electroniccomponent 11 may be disposed on the fourth conductive layer 370 of thesemiconductor package 500 of FIG. 5 to form another semiconductordevice.

FIGS. 8A to 8H illustrate manufacturing processes of the semiconductorpackage 100 of FIG. 1.

Referring to FIG. 8A, a carrier 180 is provided. The carrier 180 may beformed by a metal plate comprising of copper, iron or steel.

Referring to FIG. 8A, the first conductive layer 111 is formed on thecarrier 180 using, for example, photolithography, electroless plating,electrolytic plating, printing, sputtering, vacuum deposition, etc.

Referring to FIG. 8B, the first pillar layer 112 is formed on the firstconductive layer 111 using, for example, photolithography, electrolessplating, electrolytic plating, printing, sputtering, vacuum deposition,etc.

Referring to FIG. 8C, the first package body 113 encapsulating the firstconductive layer 111 and the first pillar layer 112 is formed on anupper surface 180 u of the carrier 180. The first package body 113 maybe formed by various packaging technologies, such as, for example,compression molding, injection molding, transfer molding or dispensingtechnology.

In the present embodiment, the first package body 113 may be grinded,such that the first upper surface 1121 u of each pillar 1121 is exposedfrom the second upper surface 113 u of the first package body 113,wherein the first upper surface 1121 u is aligned with the second uppersurface 113 u.

Referring to FIG. 8D, the second conductive layer 114 is formed on thefirst pillar layer 112 using, for example, photolithography, electrolessplating, electrolytic plating, printing, sputtering, vacuum deposition,etc. The first conductive layer 111, the first pillar layer 112, thefirst package body 113 and the second conductive layer 114 form thepackage substrate 110.

Referring to FIG. 8E, the first electronic component 120 is disposed onsecond conductive layer 114 of the package substrate 110 through theconductive contacts 121 using, for example, surface mount technology(SMT).

Referring to FIG. 8F, the second package body 130 encapsulating thefirst electronic component 120 and the second conductive layer 114 isformed on the package substrate 110. The second package body 130 may beformed by various packaging technologies, such as, for example,compression molding, injection molding, transfer molding or dispensingtechnology.

Referring to FIG. 8G, the carrier 180 is removed using, for example,etching, peeling, etc. After the carrier 180 is removed, the first lowersurface 1111 b of the first conductive layer 111 and the second lowersurface 113 b of the first package body 113 are exposed, wherein thefirst lower surface 1111 b and the second lower surface 113 b arealigned with each other. For example, the first lower surface 1111 b andthe second lower surface 113 b are coplanar.

Referring to FIG. 8H, the conductive contacts 150 are formed on thefirst lower surface 1111 b of the first conductive layer 111 using, forexample, ball mounting technology. In addition, the second electroniccomponent 140 is disposed on the first lower surface 1111 b of the firstconductive layer 111 using, for example, SMT.

FIGS. 9A to 9B illustrate manufacturing processes of the semiconductorpackage 200 of FIG. 2.

Referring to FIG. 9A, the interposer 270 connects to the packagesubstrate 110 through the second pillar layer 260. The interposer 270may electrically connect to the first electronic component 120 throughthe second pillar layer 260 and the package substrate 110.

Referring to FIG. 9B, the second package body 130 encapsulating thefirst electronic component 120, the second conductive layer 114 andsecond pillar layer 260 is formed between the package substrate 110 andthe interposer 270. The second package body 130 may be formed by variouspackaging technologies, such as, for example, compression molding,injection molding, transfer molding or dispensing technology.

Then, referring to FIG. 9B, the carrier 180 is removed. After thecarrier 180 is removed, the first lower surface 1111 b of the firstconductive layer 111 and the second lower surface 113 b of the firstpackage body 113 are exposed, wherein the first lower surface 1111 b andthe second lower surface 113 b are aligned with each other. For example,the first lower surface 1111 b and the second lower surface 113 b arecoplanar.

Then, the conductive contacts 150 and the second electronic component140 are formed on the first lower surface 1111 b of the first conductivelayer 111 to form the semiconductor package 200 of FIG. 2.

In another embodiment, the third electronic component 11 of FIG. 6 maybe disposed on the interposer 270 of FIG. 9B to form the semiconductordevice 10 of FIG. 6.

FIGS. 10A to 10C illustrate manufacturing processes of the semiconductorpackage 300 of FIG. 3.

Referring to FIG. 10A, the fourth conductive layer 370 formed on acarrier 190 connects to the package substrate 110 through the secondpillar layer 260. The fourth conductive layer 370 may electricallyconnect to the first electronic component 120 through the second pillarlayer 260 and the package substrate 110.

Referring to FIG. 10B, the second package body 130 encapsulating thefirst electronic component 120, the second conductive layer 114, thesecond pillar layer 260 and the fourth conductive layer 370 is formedbetween the package substrate 110 and the carrier 190. The secondpackage body 130 may be formed by various packaging technologies, suchas, for example, compression molding, injection molding, transfermolding or dispensing technology.

Referring to FIG. 10C, the carrier 190 is removed to expose the fourthupper surface 130 u of the second package body 130 and the fifth uppersurface 371 u of the fourth conductive layer 370, wherein the fourthupper surface 130 u and the fifth upper surface 371 u are aligned witheach other.

Referring to FIG. 10C, the carrier 180 is removed. After the carrier 180is removed, the first lower surface 1111 b of the first conductive layer111 and the second lower surface 113 b of the first package body 113 areexposed, wherein the first lower surface 1111 b and the second lowersurface 113 b are aligned with each other. For example, the first lowersurface 1111 b and the second lower surface 113 b are coplanar.

Then, the conductive contacts 150 and the second electronic component140 are formed on the first lower surface 1111 b of the first conductivelayer 111 to form the semiconductor package 300 of FIG. 3.

In another embodiment, the third electronic component 11 of FIG. 7 maybe disposed on the fourth conductive layer 370 of FIG. 10C to form thesemiconductor device 20 of FIG. 7.

FIGS. 11A to 11H illustrate manufacturing processes of the semiconductorpackage 400 of FIG. 4.

Referring to FIG. 11A, the carrier 180 is provided. The carrier 180 maybe formed by a metal plate comprising of copper, iron or steel.

Referring to FIG. 11A, the first conductive layer 111, the first pillarlayer 112, the first package body 113 are formed on the carrier 180using the processes, as mentioned above.

Referring to FIG. 11B, the third pillar layer 411 is formed on the firstpillar layer 112 using, for example, photolithography, electrolessplating, electrolytic plating, printing, sputtering, vacuum deposition,etc.

Referring to FIG. 11B, the third pillar layer 412 is formed on the thirdpillar layer 411 using, for example, photolithography, electrolessplating, electrolytic plating, printing, sputtering, vacuum deposition,etc.

Referring to FIG. 11C, the third package body 413 encapsulating thethird conductive layer 411 and the third pillar layer 412 is formed onthe second upper surface 113 u of the first package body 113. The thirdpackage body 413 may be formed by various packaging technologies, suchas, for example, compression molding, injection molding, transfermolding or dispensing technology.

In the present embodiment, the third package body 413 may be grinded,such that an upper surface 412 u of the third pillar layer 412 isexposed from the sixth upper surface 413 u of the third package body413, wherein the upper surface 412 u is aligned with the sixth uppersurface 413 u.

Referring to FIG. 11D, the second conductive layer 114 is formed on thethird pillar layer 412 using, for example, photolithography, electrolessplating, electrolytic plating, printing, sputtering, vacuum deposition,etc. The first conductive layer 111, the first pillar layer 112, thefirst package body 113, the second conductive layer 114, the thirdconductive layer 411, the third pillar layer 412 and the third packagebody 413 form the package substrate 410.

Referring to FIG. 11E, the first electronic component 120 is disposed onsecond conductive layer 114 of the package substrate 410 through theconductive contacts 121 using, for example, surface mount technology(SMT).

Referring to FIG. 11F, the interposer 270 connects to the packagesubstrate 410 through the second pillar layer 260. The interposer 270may electrically connect to the first electronic component 120 throughthe second pillar layer 260 and the package substrate 410.

Referring to FIG. 11G, the second package body 130 encapsulating thefirst electronic component 120, the second conductive layer 114 andsecond pillar layer 260 is formed between the package substrate 410 andthe interposer 270. The second package body 130 may be formed by variouspackaging technologies, such as, for example, compression molding,injection molding, transfer molding or dispensing technology.

Referring to FIG. 11H, the carrier 180 is removed using, for example,etching, peeling, etc. After the carrier 180 is removed, the first lowersurface 1111 b of the first conductive layer 111 and the second lowersurface 113 b of the first package body 113 are exposed, wherein thefirst lower surface 1111 b and the second lower surface 113 b arealigned with each other. For example, the first lower surface 1111 b andthe second lower surface 113 b are coplanar.

Then, the conductive contacts 150 and the second electronic component140 are formed on the first lower surface 1111 b of the first conductivelayer 111 to form the semiconductor package 400 of FIG. 4.

In another embodiment, the third electronic component 11 of FIG. 6 maybe disposed on the interposer 270 of FIG. 11H to form anothersemiconductor device.

FIGS. 12A to 12C illustrate manufacturing processes of the semiconductorpackage 500 of FIG. 5.

Referring to FIG. 12A, the fourth conductive layer 370 formed on thecarrier 190 connects to the package substrate 410 through the secondpillar layer 260. The fourth conductive layer 370 may electricallyconnect to the first electronic component 120 through the second pillarlayer 260 and the package substrate 410.

Referring to FIG. 12B, the second package body 130 encapsulating thefirst electronic component 120, the second conductive layer 114, thesecond pillar layer 260 and the fourth conductive layer 370 is formedbetween the package substrate 410 and the carrier 190. The secondpackage body 130 may be formed by various packaging technologies, suchas, for example, compression molding, injection molding, transfermolding or dispensing technology.

Referring to FIG. 12C, the carrier 190 is removed to expose the fourthupper surface 130 u of the second package body 130 and the fifth uppersurface 371 u of the fourth conductive layer 370, wherein the fourthupper surface 130 u and the fifth upper surface 371 u are aligned witheach other.

Referring to FIG. 12C, the carrier 180 is removed. After the carrier 180is removed, the first lower surface 1111 b of the first conductive layer111 and the second lower surface 113 b of the first package body 113 areexposed, wherein the first lower surface 1111 b and the second lowersurface 113 b are aligned with each other. For example, the first lowersurface 1111 b and the second lower surface 113 b are coplanar.

Then, the conductive contacts 150 and the second electronic component140 are formed on the first lower surface 1111 b of the first conductivelayer 111 to form the semiconductor package 500 of FIG. 5.

In another embodiment, the third electronic component 11 of FIG. 7 maybe disposed on the fourth conductive layer 370 of FIG. 12C to formanother semiconductor device.

FIG. 13 illustrates a diagram of a semiconductor package 600 accordingto another embodiment of the invention. The semiconductor package 600includes a first substrate 610, the first electronic component 120, afirst layer structure 620, a second layer structure 630, a first antennalayer 640 and at least one conductive contact 150.

The first substrate 610 has structure the same as or similar to that ofthe package substrate 110, and the similarities are not repeated here.Alternatively, the first substrate 610 may be replaced by the he packagesubstrate 110. The first electronic component 120 is disposed on asubstrate upper surface 610 u of the first substrate 610 andencapsulated by the first layer structure 620.

The first layer structure 620 is formed between the first substrate 610and the second layer structure 630. The first antenna layer 640 may beformed on at least one of the first layer structure 620 and the secondlayer structure 630. In the present embodiment, the first antenna layer640 is formed on the second layer structure 630.

The first antenna layer 640 is embedded in the second layer structure630. Furthermore, the second layer structure 630 has a second layerupper surface 630 u, the first antenna layer 640 has a first antennaupper surface 640 u substantially flush with the second layer uppersurface 630 u. In another embodiment, at least one portion of the firstantenna layer 640 may be projected with respect to the second layerupper surface 630 u.

In the present embodiment, the first layer structure 620 includes afirst package body 621, and the first package body 621 may be made of amaterial which is the same or similar to that of the second package body130. In other embodiment, the first antenna layer 640 may be embedded inthe first package body 621 of the second layer structure 620. Forexample, the first antenna upper surface 640 u of the first antennalayer 640 may be flush with a first layer upper surface 621 u of thefirst package body 621, or projected with respect to the first layerupper surface 621 u.

The second layer structure 630 includes a second package body 631, andthe second package body 631 may be made of a material which is the sameor similar to that of the first package body 621. The first antennalayer 640 is formed on the second package body 631. In anotherembodiment, the second layer structure 630 may include the featuressimilar to or the same as that of the interposer 270.

The second package body 631 has a second layer lower surface 631 b,wherein the second layer lower surface 631 b directly contact the firstlayer upper surface 621 u. In the present embodiment, there is obviousinterface between the second layer lower surface 631 b and the firstlayer upper surface 621 u.

In an embodiment of manufacturing method of the semiconductor package600, the first substrate 610 may be formed firstly, then the firstelectronic component 120 is disposed on the first substrate 610, thenthe first layer structure 620 encapsulating the first electroniccomponent 120 is formed, and then the second layer structure 630 and thefirst antenna layer 640 embedded in the second layer structure 630 aretransferred to the first layer structure 620 through a carrier (notillustrated). In addition, the first substrate 610 and the firstelectronic component 120 may formed by the steps similar to or the sameas that of FIGS. 8A to 8G or that of FIGS. 8A to 8H.

FIG. 14 illustrates a diagram of a semiconductor package 700 accordingto another embodiment of the invention. The semiconductor package 700includes the first substrate 610, the first electronic component 120,the first layer structure 620, the second layer structure 630, the firstantenna layer 640 and at least one conductive contact 150.

In the present embodiment, the first electronic component 120 isdisposed on a substrate lower surface 610 b of the first substrate 610and exposed from the first substrate 610. In another embodiment, anotherfirst electronic component 120 may be disposed on the substrate uppersurface 610 u of the first substrate 610 and encapsulated by the firstpackage body 621.

In an embodiment of manufacturing method of the semiconductor package700, the first substrate 610 may be formed firstly, then the firstelectronic component 120 is disposed on the first substrate 610, thenthe first layer structure 620 covering the first substrate 610 isformed, then the second layer structure 630 and the first antenna layer640 embedded in the second layer structure 630 are transferred to thefirst layer structure 620 through a carrier (not illustrated), and thenthe first electronic component 120 is disposed on the substrate lowersurface 610 b.

FIG. 15 illustrates a diagram of a semiconductor package 800 accordingto another embodiment of the invention. The semiconductor package 800includes the first substrate 610, the first electronic component 120,the first layer structure 620, the second layer structure 630, the firstantenna layer 640, at least one conductive contact 150 and a secondantenna layer 840.

The second antenna layer 840 is formed on the between the first layerstructure 620 and the second layer structure 630. In the presentembodiment, the second antenna layer 840 is embedded in the second layerstructure 630. For example, the second layer structure 630 has thesecond layer lower surface 631 b, and the second antenna layer 840 has asecond antenna lower surface 840 b, wherein the second layer uppersurface 631 b and the second antenna lower surface 840 b are flush witheach other. As illustrated in FIG. 15, the second layer lower surface631 b is also flush with the first layer upper surface 621 u of thefirst layer structure 620. In another embodiment, at least one portionof the second antenna lower surface 840 b may be embedded in the firstlayer structure 620.

As illustrated in FIG. 15, the semiconductor package 800 furtherincludes at least one pillar 261. The pillars 261 are embedded in thefirst package body 621 and electrically connect the second antenna layer840 with the first substrate 610. In another embodiment, at least onepillar 261 may be embedded in the second package body 631 toelectrically connect the first antenna layer 640 and the second antennalayer 840.

In an embodiment of manufacturing method of the semiconductor package800, the first substrate 610 may be formed firstly, then the firstelectronic component 120 is disposed on the first substrate 610, thenthe first layer structure 620 encapsulating the first electroniccomponent 120 is formed, and then the pillars 261 are formed on thefirst layer structure 620, then the second layer structure 630, thefirst antenna layer 640 embedded in the second layer structure 630 andthe second antenna layer 840 embedded in the second layer structure 630are transferred to the first layer structure 620 through a carrier (notillustrated). In addition, the pillars 261 and the first package body621 may formed by the steps similar to or the same as that of FIGS. 10Ato 10C or that of FIGS. 12A to 12C.

FIG. 16 illustrates a diagram of a semiconductor package 900 accordingto another embodiment of the invention. The semiconductor package 900includes the first substrate 610, the first electronic component 120,the first layer structure 920, the second layer structure 630, the firstantenna layer 640, at least one conductive contact 150 and the secondantenna layer 840.

The first layer structure 920 includes a second substrate 921 and thefirst package body 621. The second substrate 921 has a receiving portion921 r, and the first package body 621 fills up the receiving portion 921r and encapsulates the first electronic component 120 disposed withinthe receiving portion 921 r.

The second substrate 921 includes at least one pillar 261 and asubstrate material 9211, wherein the pillars 261 pass through thesubstrate material 9211 for being electrically connecting the secondantenna layer 840 with first substrate 610.

In addition, the substrate material 9211 may include multiplesub-dielectric layers. To simplify the diagram, only a single dielectriclayer is depicted herein as an example. In some embodiments, thesubstrate may be formed of organic materials, which include a polymerbase material, non-organic materials, which include silicon nitride(SiNX), silicon oxide (SiOX), graphene, or the like. In someembodiments, the substrate is a high-k dielectric layer (k is thedielectric constant of the dielectric layer). In some other embodiments,the substrate may be formed of a photosensitive material, which includesa dry film photoresist, or a taping film.

In the present embodiment, the entire second antenna layer 840 isembedded in the second layer structure 630. In another embodiment, theentire second antenna layer 840 may be embedded in the first layerstructure 920. For example, a portion of the second antenna layer 840 isembedded in the first package body 621, and the other of the secondantenna layer 840 is embedded in the second substrate 921.

In an embodiment of the manufacturing method of the semiconductorpackage 900, the first substrate 610 may be formed firstly, then thefirst electronic component 120 is disposed on the first substrate 610,then the second substrate 921 is disposed on the first substrate 610,then the first package body 621 filling up the receiving portion 921 rand encapsulating the first electronic component 120 is formed, and thenthe second layer structure 630, the first antenna layer 640 embedded inthe second layer structure 630 and the second antenna layer 840 embeddedin the second layer structure 630 are transferred to the first layerstructure 620 through a carrier (not illustrated).

FIG. 17 illustrates a diagram of a semiconductor package 1000 accordingto another embodiment of the invention. The semiconductor package 1000includes at least one pillar 261, the first substrate 610, the firstelectronic component 120, the first layer structure 620, the secondlayer structure 630, the first antenna layer 640, at least oneconductive contact 150, the second antenna layer 840 and at least onethird layer structure 1040.

The third layer structure 1040 is stacked on the second layer structure630. The third layer structure 1040 includes a package body 1041, atleast one pillar 1042 and a third antenna layer 1043. The third antennalayer 1043 is formed on the package body 1041, the pillars 1042 areembedded in the package body 1041 to electrically connect the thirdantenna layer 1043 with the first antenna layer 640 embedded in thesecond layer structure 630. In addition, the package body 1041 may bemade of a material which is the same or similar to that of the secondpackage body 130. In another embodiment, the third layer structure 1040has the structures similar or the same as that of the first layerstructure 620, or replaced by the first layer structure 620.

In another embodiment, the first layer structure 620 of thesemiconductor package 1000 may be replaced by the first layer structure920.

FIG. 18 illustrates a diagram of a semiconductor package 1100 accordingto another embodiment of the invention. The semiconductor package 1100includes the first substrate 610, the first electronic component 120, afirst layer structure 1120, the second layer structure 630, the firstantenna layer 640, at least one conductive contact 150 and the secondantenna layer 840.

In the present embodiment, the first layer structure 1120 includes aconductive pillar layer including at least one pillar 261 exposed fromthe first layer structure 1120, that is, the conductive pillar layer isnot encapsulated by any physical material. In addition, the firstelectronic component 120 disposed on the first substrate 610, surroundedby the conductive pillar layer and is also exposed from the first layerstructure 1120. Due to the pillars 261 being exposed (not encapsulated)from the first layer structure 1120, the heat dissipation of the overallsemiconductor package can be effectively improved.

In an embodiment of the manufacturing method of the semiconductorpackage 1100, the first substrate 610 may be formed firstly, then thefirst electronic component 120 is disposed on the first substrate 610,then the pillars 261 are formed on the first substrate 610 by using waysimilar to that of FIG. 12A, then the second layer structure 630, thefirst antenna layer 640 embedded in the second layer structure 630 andthe second antenna layer 840 embedded in the second layer structure 630are transferred to the pillars 261 through a carrier (not illustrated).

FIG. 19 illustrates a diagram of a semiconductor package 1200 accordingto another embodiment of the invention. The semiconductor package 1200includes the first substrate 610, the first electronic component 120,the first layer structure 1120, the second layer structure 630, thefirst antenna layer 640, at least one conductive contact 150 and thesecond antenna layer 840.

In the present embodiment, the first electronic component 120 isdisposed on the substrate lower surface 610 b of the first substrate 610and exposed from the first substrate 610. In another embodiment, anotherfirst electronic component 120 may be disposed on the substrate uppersurface 610 u of the first substrate 610 and exposed from the firstlayer structure 1120.

In an embodiment of the manufacturing method of the semiconductorpackage 1100, the first substrate 610 may be formed firstly, then thepillars 261 are formed on the first substrate 610 by using way similarto that of FIG. 12A, then the second layer structure 630, the firstantenna layer 640 embedded in the second layer structure 630 and thesecond antenna layer 840 embedded in the second layer structure 630 aretransferred to the pillars 261 through a carrier (not illustrated), andthen the first electronic component 120 is disposed on the substratelower surface 610 b of the first substrate 610.

FIG. 20 illustrates a diagram of a semiconductor package 1200 accordingto another embodiment of the invention. The semiconductor package 1300includes the first substrate 610, the first electronic component 120, afirst layer structure 1320, the second layer structure 630, the firstantenna layer 640, at least one conductive contact 150 and the secondantenna layer 840.

In the present embodiment, the first layer structure 1320 includes thesecond substrate 921. The second substrate 921 includes at least onepillar 261 and a substrate material 9211, wherein the pillars 261 passthrough the substrate material 9211 for being electrically connectingthe second antenna layer 840 with first substrate 610. The secondsubstrate 921 has the receiving portion 921 r, and there in no physicalmaterial filled up the receiving portion 921 r. The first electroniccomponent 120 is disposed within the receiving portion 921 r and exposedfrom the receiving portion 921 r.

In an embodiment of the manufacturing method of the semiconductorpackage 1300, the first substrate 610 may be formed firstly, then thefirst electronic component 120 is disposed on the first substrate 610,then the second substrate 921 is disposed on the first substrate 610,and then the second layer structure 630, the first antenna layer 640embedded in the second layer structure 630 and the second antenna layer840 embedded in the second layer structure 630 are transferred to thesecond substrate 921 through a carrier (not illustrated).

FIG. 21 illustrates a diagram of a semiconductor package 1400 accordingto another embodiment of the invention. The semiconductor package 1400includes the first substrate 610, the first electronic component 120, aplurality of the first layer structures 1120, a plurality of the secondlayer structures 630, a plurality of the first antenna layers 640, atleast one conductive contact 150 and a plurality of the second antennalayers 840.

In the present embodiment, one of the first layer structures 1120 isstacked to the first substrate 610, one of the second layer structures630 is stacked to the first layer structures 1120, another of the firstlayer structures 1120 is stacked to the second layer structures 630, andanother of the second layer structures 630 is stacked to the first layerstructures 1120

FIG. 22 illustrates a diagram of a semiconductor package 1500 accordingto another embodiment of the invention. The semiconductor package 1500includes the first substrate 610, the first electronic component 120,the first layer structures 920 and 1320, a plurality of the second layerstructures 630, a plurality of the first antenna layers 640, at leastone conductive contact 150 and a plurality of the second antenna layers840.

In the present embodiment, the first layer structure 920 is stacked tothe first substrate 610, one of the second layer structures 630 isstacked to the first layer structures 920, the first layer structures1320 is stacked to the second layer structures 630, and another of thesecond layer structures 630 is stacked to the first layer structures1320.

As described above, the number of the first layer structures may beplural, and the number of the second layer structures may be plural,wherein one of the first layer structures may be disposed between thefirst substrate and one of the second layer structures, and another ofthe first layer structures may be disposed between the two of the secondlayer structures.

While the invention has been described in terms of what is presentlyconsidered to be the most practical and preferred embodiments, it is tobe understood that the invention needs not be limited to the disclosedembodiment. On the contrary, it is intended to cover variousmodifications and similar arrangements included within the spirit andscope of the appended claims which are to be accorded with the broadestinterpretation so as to encompass all such modifications and similarstructures.

What is claimed is:
 1. A semiconductor package, comprises: a firstsubstrate; a first layer structure; a second layer structure; a firstantenna layer formed on at least one of the first layer structure andthe second layer structure; wherein the first layer structure is formedbetween the first substrate and the second layer structure; wherein thefirst antenna layer has an upper surface flush with a layer uppersurface of the second layer structure; wherein no physical conductiveelement is disposed between the first antenna layer and the firstsubstrate, and the second layer structure is molding compound.
 2. Thesemiconductor package as claimed in claim 1, further comprises: a secondantenna layer formed on at least one of the first layer structure andthe second layer structure.
 3. The semiconductor package as claimed inclaim 2, wherein the second layer structure has a layer lower surface,the second antenna layer has an antenna lower surface substantiallyflush with the layer lower surface.
 4. The semiconductor package asclaimed in claim 1, wherein the first layer structure comprises a firstpackage body having a layer upper surface, the second layer structurecomprises a second package body having a layer lower surface directlycontact the layer upper surface.
 5. The semiconductor package as claimedin claim 1, further comprises: an electronic component disposed on asubstrate upper surface of the first substrate and encapsulated by thefirst layer structure.
 6. The semiconductor package as claimed in claim1, further comprises: an electronic component disposed on a substratelower surface of the first substrate and exposed from the firstsubstrate.
 7. The semiconductor package as claimed in claim 1, whereinthe second layer structure comprises a package body, the first antennalayer is embedded in the package body.
 8. The semiconductor package asclaimed in claim 1, wherein the first layer structure comprises a secondsubstrate and a first package body, the second substrate has a receivingportion, and the first package body fills up the receiving portion. 9.The semiconductor package as claimed in claim 8, further comprises: anelectronic component disposed within the receiving portion andencapsulated by the first package body.
 10. The semiconductor package asclaimed in claim 8, further comprises: an electronic component disposedwithin the receiving portion and exposed from the first layer structure.11. A semiconductor package, comprises: a first substrate; a first layerstructure comprising a conductive pillar layer, wherein the conductivepillar layer comprises a pillar having a lateral surface which is notencapsulated by any physical material; a second layer structure; a firstantenna layer formed on at least one of the first layer structure andthe second layer structure; wherein the first layer structure is formedbetween the first substrate and the second layer structure; wherein theconductive pillar layer electrically connects the second layer structurewith the first substrate.
 12. The semiconductor package as claimed inclaim 11, wherein the second layer structure has a layer upper surface,the first antenna layer has an antenna upper surface substantially flushwith the layer upper surface.
 13. The semiconductor package as claimedin claim 11, further comprises: a second antenna layer formed on atleast one of the second layer structure.
 14. The semiconductor packageas claimed in claim 13, wherein the second layer structure has a layerlower surface, the second antenna layer has an antenna lower surfacesubstantially flush with the layer lower surface.
 15. The semiconductorpackage as claimed in claim 11, further comprises: an electroniccomponent disposed on a substrate upper surface of the first substrateand surrounded by the conductive pillar layer.
 16. The semiconductorpackage as claimed in claim 11, further comprises: an electroniccomponent disposed on a substrate lower surface of the first substrateand exposed from the first substrate.
 17. The semiconductor package asclaimed in claim 16, wherein the second layer structure comprises apackage body, the first antenna layer is embedded in the package body.